Session Overview |
Nonlinear Optics, Nanophotonics and Plasmonics - Bloc 5Room: Cartier 2 |
Date: Thursday, June 07 |
13:00 |
Single Digit Nanofabrication for Photonics at Nanoscale
Main Author: Stefano Cabrini Organization: Lawrence Berkeley National Laboratory, United States Nanophotonic applications are extremely dependent on the control of the materials at nanoscale. Nanofabrication techniques allows to explore the limit of the theoretical prediction as well as prepare real devices that can be applied in real applications. We will describe three examples were the fabrication techniques have been instrumental to solve important problems in photonics at nanoscale |
13:25 |
Sieving Photons for Optical Wavefront Manipulation
Main Author: Jinghua Teng Organization: Institute of Materials Research and Engineering (IMRE), A*STAR, Singapore This talk will introduce our work on using photon sieves to manipulate light properties for high tolerance hologram, OAM control and sub-diffraction limit focusing. |
13:50 |
Dynamics of Excitons and Surface Plasmon Polaritons in strongly coupled regime
Main Author: Andrea Toma Organization: Istituto Italiano di Tecnologia, Italy Transient absorption experiments have been performed with the aim of investigating the dynamics of strongly coupled exciton-plasmon states. |
14:15 |
Recent Advances in Hybrid Plasmonics
Main Author: Amr Helmy Organization: University of Toronto, Canada Data communications has the potential to deliver the necessary information bandwidth, latency, and power consumption required for new generations of VLSI [1]. However, requirements dictated by practical optoelectronic integration not only necessitates the miniaturization of optical devices towards truly nano-scale, but also mandates material compatibility and nonintrusive integration with CMOS technology, which are often overlooked in the effort to optimize device performance. Optical detection is a quintessential function within transceivers for data communications. Current guided-wave photodetector designs, utilizing germanium [1], 2-D materials [2], resonant cavities [3], or plasmonic effects [4], cannot fulfill all these requirements simultaneously. Moreover, their junctions, where photogeneration takes place, are typically implemented by utilizing crystalline materials, which are inherently incompatible with CMOS back-end processing and will likely dictate significant modifications to front-end-of-line CMOS processes. |