Photonic theory design and simulations - 6Virtual room: INO - 2
|Wednesday, May 27|
TD-6-27-1 / Emission and Detection in the SWIR-MIR using an All-Group IV Semiconductor Platform
* Simone Assali, Polytechnique Montreal, Canada
Anis Attiaoui, Polytechnique Montreal
Mahmoud Atalla, Polytechnique Montreal
Oussama Moutanabbir, Polytechnique Montreal
Sn-containing group IV semiconductors (Si)GeSn represent a versatile platform to implement a variety of Si-compatible photonic, optoelectronic, and photovoltaic devices. In this presentation, the recent progress in tailoring and understanding the opto-electronic properties of metastable (Si)GeSn semiconductors will be discussed.
TD-6-27-2 / Multiplexing of optical vortices in silicon photonic circuits
* Wei Shi, Universite Laval, Canada
TD-6-27-3 / Design and demonstration of photonic flat-band lattices for light localization
Zhigang Chen, Nankai University, China
* Liqin Tang, Nankai University, China
Daohong Song, Nankai University
Shiqi Xia, Nankai University
Shiqiang Xia, Nankai University
Jina Ma, Nankai University
Wenchao Yan, Nankai University
Flat-band systems have attracted considerable interest in many different branches of physics in the past decade, providing a flexible platform for studying a variety of fundamental phenomena. In this talk, we will present a brief overview of our recent work on design and demonstration of photonic flat-band lattices and associated flat-band light locations, including unconventional line states and noncontractable loop states arising from real-space topolgy. We show that such photonic structures offer a convenient platform for probing the underlying physics of flat-band systems, which may provide inspiration for exploring fundamentals and applications of flat-band physics in other structured media from metamaterials to nanophotonic materials.
TD-6-27-4 / AP Component Library: Enabling 400G Silicon Photonics Integrated Circuit Transceiver Chipsets
* Zhan Su, Analog Photonics, United States
Erman Timurdogan, Analog Photonics
Ren-Jye Shiue, Analog Photonics
Matthew Byrd, Analog Photonics
Christopher Poulton, Analog Photonics
Kenneth Jabon, Analog Photonics
Christopher DeRose, Analog Photonics
Benjamin Moss, Analog Photonics
Ehsan Hosseini, Analog Photonics
Ronald Millman, Analog Photonics
Dogan Atlas, Analog Photonics
Michael Watts, Analog Photonics
Recent progress on component library development by Analog Photonics (AP) will be reviewed and its application in 400G transceiver systems will be discussed.
TD-6-27-5 / Titanium Dioxide AWG for the Visible
* Janvit Tippinit, Institute of Photonics, University of Eastern Finland, Finland
We demonstrate a novel scheme of titanium dioxide arrayed waveguide grating de-multiplexer operating at the center wavelength of 514 nm. The device includes four output channels providing a wavelength separation of 1 nm.
TD-6-27-6 / GeSbTe diffraction grating on a silicon waveguide
* Ramil Minnullin, Moscow Institute of Physics and Technology (National Research University), Russian Federation
Mikhail Barabanenkov, Institute of Microelectronics Technology of Russian Academy of Sciences
A GeSbTe (GST) lamellar diffraction grating placed on a silicon-on-insulator waveguide is considered as a potential component of a photonic non-volatile memory cell. Unlike a continuous film the grating allows diminishing an energy budget of incident electromagnetic beam due to the excitation of resonant guided mode in the grating. Excitation of this mode results in an anomalous reflection spectra of the waveguide-grating structure. We calculate these spectra with the use of the matrix Riccati equation technique and show how the reflectance changes with variation of the grating period and height, incident wave polarization, and phase of the GST.
TD-6-27-7 / Numerical optimization of a non-volatile storage element with optical recording and readout
* Mikhail Makarov, JSC MERI, Russian Federation
Ramil Minnullin, JSC MERI
Dmitrii Korolev, JSC MERI
The optimized parameters for the storage element of a non-volatile memory cell with optical control are presented. The storage element was optimized for a single TE-mode polarization to meet the requirements of both long- and short- distance communication. Also, the paper demonstrates how the optical mode regime changes with the variation of the waveguide geometry and phase state of Ge2Sb2Te5.